Novel Damascene Gate Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy

A new concept planar metal--oxide--semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped st...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2010-07, Vol.49 (7), p.071301-071301-5
Main Authors: Kikuchi, Yoshiaki, Tateshita, Yasushi, Miyanami, Yuki, Wakabayashi, Hitoshi, Tagawa, Yukio, Nagashima, Naoki
Format: Article
Language:English
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Summary:A new concept planar metal--oxide--semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.071301