Improvement of Thickness Uniformity of Silicon on Insulator Layer by Numerically Controlled Sacrificial Oxidation Using Atmospheric-Pressure Plasma with Electrode Array System

Recently, silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistors (MOSFETs) have attracted great interest from manufacturers of semiconductor devices because of their excellent electrical characteristics. According to International Technology Roadmap for Semiconductors 2007,...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2010-08, Vol.49 (8), p.08JJ04-08JJ04-4
Main Authors: Kamisaka, Shohei, Yoshinaga, Keinosuke, Sano, Yasuhisa, Mimura, Hidekazu, Matsuyama, Satoshi, Yamauchi, Kazuto
Format: Article
Language:English
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Summary:Recently, silicon-on-insulator (SOI) metal--oxide--semiconductor field-effect transistors (MOSFETs) have attracted great interest from manufacturers of semiconductor devices because of their excellent electrical characteristics. According to International Technology Roadmap for Semiconductors 2007, a very uniform surface Si layer will be required in a few years; however, no production method has been identified. To achieve the required uniformity in surface Si layer thickness, a new method of numerically controlled sacrificial oxidation using atmospheric-pressure plasma was developed. This paper demonstrates a new electrode array system developed for rapid processing. A very uniform oxide with a peak-to-valley (PV) of 0.13 nm was obtained; the relationship of oxide thickness versus oxidation time is shown.
ISSN:0021-4922
1347-4065
1347-4065
DOI:10.1143/JJAP.49.08JJ04