Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell

In this paper, we propose a novel fin and recess-channel metal oxide semiconductor field effect transistor (MOSFET) for sub-50 nm dynamic random access memory (DRAM) cell application. Also, it is compared with the recess-channel-array transistor (RCAT). In the proposed device, a silicon fin region i...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2010-10, Vol.49 (10), p.104202-104202-5
Main Authors: Song, Jae Young, Kim, Jong Pil, Kim, Sang Wan, Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Sun, Min-Chul, Kim, Garam, Yun, Jang-Gn, Shin, Hyungcheol, Park, Byung-Gook
Format: Article
Language:English
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Summary:In this paper, we propose a novel fin and recess-channel metal oxide semiconductor field effect transistor (MOSFET) for sub-50 nm dynamic random access memory (DRAM) cell application. Also, it is compared with the recess-channel-array transistor (RCAT). In the proposed device, a silicon fin region is added to the recessed channel MOSFET. Thanks to the additional current path through the silicon fin with the wide source/drain width, the FiReFET shows excellent current drivability. To reduce gate-induced drain leakage (GIDL) current, we adopt an underlapped device structure. As a result, it is found that the optimized underlap structure helps to prevent the OFF state leakage current induced by the increase of the gate work function.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.104202