Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

We have fabricated single-electron transistors (SETs) with a recessed channel structure using a thermal oxidation process for decreasing the size of quantum dots (QDs). Moreover, the QDs are defined on a one-dimensional silicon nanowire by two tunneling barriers induced through thermal oxidation. Al...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2010-11, Vol.49 (11), p.115202-115202-6
Main Authors: Lee, Joung-Eob, Kim, Garam, Wan, Kim Kyung, Shim, Won Bo, Lee, Jung-Han, Kang, Kwon-Chil, Yun, Jang-Gn, Lee, Jong-Ho, Shin, Hyungcheol, Park, Byung-Gook
Format: Article
Language:English
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Summary:We have fabricated single-electron transistors (SETs) with a recessed channel structure using a thermal oxidation process for decreasing the size of quantum dots (QDs). Moreover, the QDs are defined on a one-dimensional silicon nanowire by two tunneling barriers induced through thermal oxidation. Also, for decreasing the control gate capacitance, the dimension of the control gate depends not on the electron beam or photolithography method. The control gate is formed by the controllability of chemical vapor deposition (CVD). Owing to this small capacitance, we have clear Coulomb oscillation peaks and negative differential trans-conductance curves at room temperature. The oscillation period of the fabricated device is approximately 1.9 V.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.115202