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Characterizations of NiSi 2 -Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Channel on Si(100)
Electrical and physical characteristics of nickel disilicide (NiSi 2 )-whisker defects in n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) on Si(100) have been investigated. NiSi 2 -whisker defects are easily generated in narrow-channel-width nMOSFETs with the channel on Si(10...
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Published in: | Japanese Journal of Applied Physics 2010-12, Vol.49 (12R), p.126503 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Electrical and physical characteristics of nickel disilicide (NiSi
2
)-whisker defects in n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) on Si(100) have been investigated. NiSi
2
-whisker defects are easily generated in narrow-channel-width nMOSFETs with the channel on Si(100) and anomalously increase the leakage current between the drain and the source. A NiSi
2
whisker elongates toward the direction along the trench edge and pierces the channel region. These physical properties of NiSi
2
-whisker defects were revealed by detailed failure analyses. The influence of the recessed depth of trench-fill oxides on NiSi
2
-whisker defects was also investigated. Furthermore, it is found that trench-edge defects, such as Si(111) stacking faults, are generated in the channel before the Ni silicide formation. These trench-edge defects were not observed in the channel. We also propose a generation model for NiSi
2
-whisker defects. The nucleation of NiSi
2
precipitates might be generated at trench-edge defects, and Ni atoms diffuse toward the direction during the silicidation annealing. As a result, NiSi
2
-whisker defects are generated toward the direction at the trench edge. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.49.126503 |