Dislocation Etch Pits and Phase Stability on Single Crystal Tungsten Disilicide

Spiral and hexahedral etch pits brought out dislocation loops on single crystal WSi 2 by etching with 8H 2 O: 4HNO 3 : 1HF or 3H 2 O: 1HNO 3 . The dislocation density was calculated to be 2×10 8 dislocations/cm 2 . Annealing at temperatures ranging from 1400° to 1800°C decreased the number of disloc...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1965-01, Vol.4 (4), p.269
Main Authors: Vahldiek, F. W., Mersol, S. A., Lynch, C. T.
Format: Article
Language:English
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Summary:Spiral and hexahedral etch pits brought out dislocation loops on single crystal WSi 2 by etching with 8H 2 O: 4HNO 3 : 1HF or 3H 2 O: 1HNO 3 . The dislocation density was calculated to be 2×10 8 dislocations/cm 2 . Annealing at temperatures ranging from 1400° to 1800°C decreased the number of dislocation loops present. Annealing of specimens at 1600°C or above resulted in the formation of the second phase WSi 0.7 as verified by x-ray and electron microprobe analyses. At 1800°C the etch pits started to disappear which apparently is associated with the formation of the second phase.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.4.269