Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array

We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta 2 O 5 /SiO 2 multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhanceme...

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Published in:Japanese Journal of Applied Physics 2011-04, Vol.50 (4), p.04DG07-04DG07-3
Main Authors: Ku, Hao Ming, Huang, Chen Yang, Liao, Chen Zi, Chao, Shiuh
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Language:English
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description We report here details of the epitaxial lateral overgrowth (ELOG) process for embedding a Ta 2 O 5 /SiO 2 multilayer high reflector micro-mirror array (MMA) in the GaN. The process was aiming for purpose of applying the MMA on the micro-light emitting diode (micro-LED) for light extraction enhancement of the micro-LED. A two-step ELOG process with different temperature and pressure to achieve high lateral growth rate and low vertical growth rate was implemented and the two-step ELOG process was followed by a slow growth rate process to complete embedding the MMA.
doi_str_mv 10.1143/JJAP.50.04DG07
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title Epitaxial Lateral Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array
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