N-Polar III--Nitride Green (540 nm) Light Emitting Diode

We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N 2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In 0.29 Ga 0.71 N quantum wells were grown at a temperature of 600 °C by applying a new growth model. LED st...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-05, Vol.50 (5), p.052101-052101-3
Main Authors: Akyol, Fatih, Nath, Digbijoy N, Gür, Emre, Park, Pil Sung, Rajan, Siddharth
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N 2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In 0.29 Ga 0.71 N quantum wells were grown at a temperature of 600 °C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm 2 . This work is the first demonstration of an N-polar LED with emission in the green wavelength range.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.052101