Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield im...

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Published in:Japanese Journal of Applied Physics 2011-05, Vol.50 (5), p.05EB04-05EB04-6
Main Authors: Oshida, Daisuke, Kume, Ippei, Katsuyama, Hirokazu, Taiji, Toshiji, Maruyama, Takuya, Ueki, Makoto, Inoue, Naoya, Iguchi, Manabu, Fujii, Kunihiro, Oda, Noriaki, Sakurai, Michio
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creator Oshida, Daisuke
Kume, Ippei
Katsuyama, Hirokazu
Taiji, Toshiji
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Fujii, Kunihiro
Oda, Noriaki
Sakurai, Michio
description The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield improvement was also confirmed as a result of eliminating of etching residues in via-holes. These results indicate that high production yield and reliability can be obtained by PET for 28-nm-node complementary metal oxide semiconductor (CMOS) devices and beyond.
doi_str_mv 10.1143/JJAP.50.05EB04
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title Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond
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