Dielectric Anomaly and Conductivity at Ferroelectric Phase Transition in TlInS 2 Doped with Different Impurities

The low-frequency dielectric function and conductivity at ferroelectric phase transition have been analyzed in monoclinic TlInS 2 crystals doped with different impurities. Complementary, room-temperature optical absorption and photoconductivity have been examined to identify shallow and deep energy...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-05, Vol.50 (5S2), p.5
Main Authors: Alekperov, Oktay, Nadjafov, Arzu
Format: Article
Language:English
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Summary:The low-frequency dielectric function and conductivity at ferroelectric phase transition have been analyzed in monoclinic TlInS 2 crystals doped with different impurities. Complementary, room-temperature optical absorption and photoconductivity have been examined to identify shallow and deep energy levels caused by the introduced impurities. It is found that only shallow impurities broaden and shift dielectric anomaly towards lower temperatures. Contrary to our expectation, the dark conductivity at the temperature of the dielectric anomaly is maximum rather than minimum. The dielectric breakdown of the shallow impurities is proposed to be responsible for the observed behavior of the dark conductivity in monoclinic TlInS 2 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.05FC07