Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation

We have studied transport characteristics through a lateral p--n--p graphene structure with relatively wide n-channel gate length. The source-to-drain length, gate width and gate length were 4, 0.5, and 0.2 μm, respectively. Although the tunnel barrier thickness of 2000 $Å$ was comparable to the est...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-06, Vol.50 (6), p.06GE13-06GE13-3
Main Author: Konishi, Keita
Format: Article
Language:English
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Summary:We have studied transport characteristics through a lateral p--n--p graphene structure with relatively wide n-channel gate length. The source-to-drain length, gate width and gate length were 4, 0.5, and 0.2 μm, respectively. Although the tunnel barrier thickness of 2000 $Å$ was comparable to the estimated mean free path, the observed conductance oscillation due to Fabry--Pérot resonance clearly indicated Klein tunneling.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.06GE13