The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates

The optical properties of non-polar InGaN/GaN multiple quantum wells grown on $r$-plane sapphire substrates are investigated as a function of threading dislocation density. The 6 K emission spectrum consists of a peak at 3.25 eV and a broad band centred around 2.64 eV. From microscopy and cathodolum...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-08, Vol.50 (8), p.080201-080201-3
Main Authors: Badcock, Tom J, Hao, Rui, Moram, Michelle A, Kappers, Menno J, Dawson, Phil, Humphreys, Colin J
Format: Article
Language:English
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Summary:The optical properties of non-polar InGaN/GaN multiple quantum wells grown on $r$-plane sapphire substrates are investigated as a function of threading dislocation density. The 6 K emission spectrum consists of a peak at 3.25 eV and a broad band centred around 2.64 eV. From microscopy and cathodoluminescence studies, the higher energy peak is assigned to recombination within quantum wells lying on the $(11\bar{2}0)$ plane which are intersected by basal-plane stacking faults. The lower energy band is attributed to emission from sidewall quantum wells of varying width and composition which form on the various semi-polar facets of structural defects that develop during the quantum well growth.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.080201