Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate

Low-loss amorphous-silicon (a-Si) waveguides comprising three vertically stacked layers prepared on silicon-on-insulator substrates are demonstrated. We have fabricated multilayer a-Si waveguides and investigated their loss characteristics; this is the first such investigation to our knowledge. All...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2011-12, Vol.50 (12), p.120208-120208-3
Main Authors: Kang, JoonHyun, Atsumi, Yuki, Oda, Manabu, Amemiya, Tomohiro, Nishiyama, Nobuhiko, Arai, Shigehisa
Format: Article
Language:English
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Summary:Low-loss amorphous-silicon (a-Si) waveguides comprising three vertically stacked layers prepared on silicon-on-insulator substrates are demonstrated. We have fabricated multilayer a-Si waveguides and investigated their loss characteristics; this is the first such investigation to our knowledge. All the process temperatures were regulated below 400 °C for the complementary metal oxide semiconductor (CMOS) backend process compatibility. When the surface roughness and sidewall roughness were decreased, the propagation loss decreased to 3.7 dB/cm even in the case of the third layer a-Si waveguide. Such low-loss waveguides can be effectively applied to realize multilayer stacked optical devices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.120208