Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

• Published in: Japanese Journal of Applied Physics 2011-12, Vol.50 (12), p.124301-124301-4, Article 124301
• Main Authors: Kang, In Man, Jang, Jung-Shik, Choi, Woo Young
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065; 1347-4065
• DOI: 10.1143/JJAP.50.124301

Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO 2 -only and high-$k$-only TFETs in terms of $f_{\text{T}}$, $f_{\text{max}}$, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher $f_{\text{T}}/f_{\text{max}}$ and smaller switching time than SiO 2 -only TFETs and high-$k$-only TFETs because they have higher $g_{\text{m}}$ and current drivability than SiO 2 -only TFET and smaller gate capacitance than high-$k$-only TFET.