Combinatorial Deposition of Microcrystalline Silicon Films Using Multihollow Discharge Plasma Chemical Vapor Deposition

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion me...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-01, Vol.51 (1), p.01AD02-01AD02-4
Main Authors: Koga, Kazunori, Matsunaga, Takeaki, Kim, Yeonwon, Nakahara, Kenta, Yamashita, Daisuke, Matsuzaki, Hidefumi, Kamataki, Kunihiro, Uchida, Giichiro, Itagaki, Naho, Shiratani, Masaharu
Format: Article
Language:English
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Summary:A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (μc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of μc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH 3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality μc-Si:H films becomes quite narrower for the higher gas pressure.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.01AD02