III--Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation

• Published in: Japanese Journal of Applied Physics 2012-02, Vol.51 (2), p.025502-025502-8
• Main Authors: Aida, Hideo, Kim, Seong-Woo, Sunakawa, Kazuhiko, Aota, Natsuko, Koyama, Koji, Takeuchi, Misaichi, Suzuki, Toshimasa
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.51.025502

The importance of the atomically well-controlled surface of sapphire substrate with slight misorientation and ideally minimized surface roughness for III--nitride epitaxy is discussed in detail. An atomically controlled surface of sapphire substrate with slight misorientation angle is modeled and an almost ideal level of atomic surface roughness of sapphire substrate is found to be obtained by a chemical mechanical polishing (CMP) with colloidal silica. Cathodoluminescence (CL) imaging indicated the complete absence of subsurface damage induced by mechanical polishing. GaN and AlN thin films are grown on misoriented sapphire substrate with an atomically controlled surface by the CMP to investigate the misorientation angle of both sapphire and grown GaN and AlN thin films. An interface model is proposed to explain the difference in misorientation angle between sapphire and III--nitride thin films, providing strong evidence of the necessity of atomically controlled surface of sapphire substrate for III--nitride epitaxy.