Ion Conductivity of Ta 2 O 5 Solid Electrolyte Thin Film Prepared by Combination Sputtering with Radio Frequency Oxygen Plasma Irradiation

In light of the need to simplify combination sputtering systems and to use them to fabricate thin-film electronic materials, we fabricated a Ta 2 O 5 solid electrolyte thin-film that exhibits superior ion conductivity by using combination sputtering with RF oxygen plasma irradiation. The formation o...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-02, Vol.51 (2R), p.25801
Main Authors: Noguchi, Daisuke, Taneda, Hiroshi, Higashimaru, Yukie, Kawano, Yoshihiko, Sei, Fumihiro
Format: Article
Language:English
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Summary:In light of the need to simplify combination sputtering systems and to use them to fabricate thin-film electronic materials, we fabricated a Ta 2 O 5 solid electrolyte thin-film that exhibits superior ion conductivity by using combination sputtering with RF oxygen plasma irradiation. The formation of Ta 2 O 5 thin films using this technique was confirmed by Rutherford backscattering spectroscopy and the effectiveness of the resulting thin film as a solid electrolyte was demonstrated by its ion conductivity, which was determined by AC impedance measurement.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.025801