Characterization of In 20 Ge 15 Sb 10 Te 55 Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

An indium-incorporated germanium–antimony–telluride material, In 20 Ge 15 Sb 10 Te 55 (IGST), was investigated as a recording material for phase change memory. The crystallization temperature of IGST was 226 °C, which is 75 °C higher than that of conventional GST. The reset current of the device usi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-03, Vol.51 (3R), p.31201
Main Authors: Morikawa, Takahiro, Kurotsuchi, Kenzo, Fujisaki, Yoshihisa, Matsui, Yuichi, Takaura, Norikatsu
Format: Article
Language:English
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Summary:An indium-incorporated germanium–antimony–telluride material, In 20 Ge 15 Sb 10 Te 55 (IGST), was investigated as a recording material for phase change memory. The crystallization temperature of IGST was 226 °C, which is 75 °C higher than that of conventional GST. The reset current of the device using IGST was about 10 mA for a plug 180 nm in diameter, which enabled a low-power operation, compared with the GST-based device. A cycle endurance of up to 1.5×10 4 was achieved. The data retention was estimated to be 10 years at 145 °C. These data clearly show that IGST exhibits promising characteristics as a recording material for phase change memory.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.031201