InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition

InAs quantum dots (QDs) on a 2-nm-thick GaNP buffer layer on GaP were investigated using low-pressure metalorganic chemical vapor deposition. The InAs QDs density was significantly increased from $2.6\times 10^{9}$ to $2.0\times 10^{10}$ cm -2 by increasing the nitrogen composition from 0 to 4.5% in...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-08, Vol.51 (8), p.080201-080201-3
Main Authors: Miyamoto, Tomoyuki, Tanabe, Satoru, Nishio, Rei, Kobayashi, Yoshitaka, Suzuki, Ryoichiro
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InAs quantum dots (QDs) on a 2-nm-thick GaNP buffer layer on GaP were investigated using low-pressure metalorganic chemical vapor deposition. The InAs QDs density was significantly increased from $2.6\times 10^{9}$ to $2.0\times 10^{10}$ cm -2 by increasing the nitrogen composition from 0 to 4.5% in GaNP. The formation characteristics of InAs QDs were also investigated at various InAs supply amounts from 0.7 to 2.5 monolayers (ML). The generation of QDs on the GaNP and GaP buffer layers started at the InAs supplies of 1.0 and 1.1 ML, respectively. Since the lattice mismatches were large, these supply amounts were definitely smaller than that on GaAs.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.080201