Transverse Magnetic Field Effect on Carrier Injection into Germanium Slice

It is shown that the electric field intensity ( E t h ) necessary for observing the effective carrier injection into long and thin germanium slice increases with the increasing transverse magnetic field intensity, even when lifetime of carriers in the slice becomes longer with the transverse magneti...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1968-01, Vol.7 (10), p.1210
Main Authors: Miyazaki, Kazuhiko, Yamaguchi, Jiro
Format: Article
Language:English
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Summary:It is shown that the electric field intensity ( E t h ) necessary for observing the effective carrier injection into long and thin germanium slice increases with the increasing transverse magnetic field intensity, even when lifetime of carriers in the slice becomes longer with the transverse magnetic field. The phenomenon is considered by the concept of the field-driven, volume-controlled and space charge limited current in long specimens of semiconductors presented by Lampert and Rose in conjunction with the transverse magnetic field effect. The calculated values of the threshold electric field intensity in transverse magnetic field are compared with the experimental results of N-type ana P-type materials with different dimensions at 77°K. It is suggested that the phenomenon will be influenced, though indirectly, by the space charge due to the Hall effect.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.7.1210