A Dynamic Huffman Coding Method for Reliable TLC NAND Flash Memory

With the progress of the manufacturing process, NAND flash memory has evolved from the single-level cell and multi-level cell into the triple-level cell (TLC). NAND flash memory has physical problems such as the characteristic of erase-before-write and the limitation of program/erase cycles. Moreove...

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Bibliographic Details
Published in:ACM transactions on design automation of electronic systems 2021-09, Vol.26 (5), p.1-25
Main Authors: Wu, Chin-Hsien, Zhang, Hao-Wei, Liu, Chia-Wei, Yu, Ta-Ching, Yang, Chi-Yen
Format: Article
Language:English
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Summary:With the progress of the manufacturing process, NAND flash memory has evolved from the single-level cell and multi-level cell into the triple-level cell (TLC). NAND flash memory has physical problems such as the characteristic of erase-before-write and the limitation of program/erase cycles. Moreover, TLC NAND flash memory has low reliability and short lifetime. Thus, we propose a dynamic Huffman coding method that can apply to the write operations of NAND flash memory. The proposed method exploits observations from a Huffman tree and machine learning from data patterns to dynamically select a suitable Huffman coding. According to the experimental results, the proposed method can improve the reliability of TLC NAND flash memory and also consider the compression performance for those applications that require the Huffman coding.
ISSN:1084-4309
1557-7309
DOI:10.1145/3446771