Performance-optimized gate-first 22-nm SOI technology with embedded DRAM

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Bibliographic Details
Published in:IBM journal of research and development 2015-01, Vol.59 (1), p.5-5:14
Main Authors: Freeman, G., Chang, P., Engbrecht, E. R., Giewont, K. J., Hilscher, D. F., Lagus, M., McArdle, T. J., Morgenfeld, B., Narasimha, S., Norum, J. P., Nummy, K. A., Parries, P., Wang, G., Winslow, J. K., Agnello, P., Malik, R.
Format: Article
Language:English
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ISSN:0018-8646
0018-8646
DOI:10.1147/JRD.2014.2380252