Synthesis, Characterization and Device Applications of InGaAs Nanowires

As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method...

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Bibliographic Details
Main Authors: Hou, Jared J., Han, Ning, Wang, Fengyun, Yip, SenPo, Xiu, Fei, Hung, TakFu, Ho, Johnny Chung Yin
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (~1E6) and electron mobility (~1300 cm2/Vs), which could be utilized in future integrated circuits.
ISSN:1938-5862
1938-6737
DOI:10.1149/05006.0179ecst