Advanced Characterization of a Direct Wafer Bonding-compatible Germanium Exfoliation Process

In this study, it is demonstrated that the propagation of long-range cracks in hydrogen-implanted germanium with a low-temperature exfoliation process (300 {degree sign}C max) is as complete as with conventional exfoliation processes that take place at higher temperatures. Such low-temperature exfol...

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Bibliographic Details
Main Authors: Ferain, Isabelle Pauline, Kou, Xiaolu, Moulet-Ventosa, Caroline, Goorsky, M. S., Colinge, Cindy
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:In this study, it is demonstrated that the propagation of long-range cracks in hydrogen-implanted germanium with a low-temperature exfoliation process (300 {degree sign}C max) is as complete as with conventional exfoliation processes that take place at higher temperatures. Such low-temperature exfoliation process is fully compliant with direct silicon to germanium wafer bonding. It allows for limited lattice deformation - enhanced bond strength i.e. - and limited voids formation at the bond interface during post-bonding anneal.
ISSN:1938-5862
1938-6737
DOI:10.1149/05007.0331ecst