Long Wavelength {greater than or equal to}1.9 μm Germanium for Optoelectronics Using Process Induced Strain

The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before bein embedded in a strained silicon nitride films. Using different deposition conditions and different sizes of structures the stress in the nanostructures can be co...

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Bibliographic Details
Main Authors: Velha, Philippe, Gallacher, Kevin Francis, Dumas, Derek Charles, Paul, Douglas J, Myronov, Maksym, Leadley, David R
Format: Conference Proceeding
Language:English
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Summary:The photoluminescence of tensile strained germanium nanostructures is reported. Sub-micron gratings and pillars were fabricated before bein embedded in a strained silicon nitride films. Using different deposition conditions and different sizes of structures the stress in the nanostructures can be controlled. The measured optical properties of the samples show that the direct band-gap is shifted drastically towards higher wavelength over 1.9 um wavelength. This process of local control of the stress in germanium nanostructures is compatible with integrated photonic devices in waveguides geometry. That opens the route for both emitters and photo-detectors above 1.6 um wavelength which are not easily available and also potentially towards a germanium laser.
ISSN:1938-5862
1938-6737
DOI:10.1149/05009.0779ecst