Polycrystalline CdTe PN Diode Formed by Au and Al Diffusion

This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques w...

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Main Authors: Kim, Jin Sung, Jeon, Pyo Jin, Lee, Junyeong, Kim, Min Je, Lee, Dong-jin, Kim, Tae-woo, Song, Pung Keun, Lee, Geon-Hwan, Im, Seongil
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 mm-thick thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. And scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.
ISSN:1938-5862
1938-6737
DOI:10.1149/05302.0011ecst