Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film

This study compares the physical, electrical, and reliability characteristics of the high- k HfO 2 film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750 o C, the single-step annealed HfO 2 has transformed into the polycrystalline phase, wher...

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Bibliographic Details
Published in:ECS transactions 2013-08, Vol.58 (10), p.235-245
Main Authors: Cheng, Yi-Lung, Hsieh, Cheng-Yang, Bo, Tian-Cih, Wu, Chang-Sian, Lin, Jian-Run
Format: Article
Language:English
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Summary:This study compares the physical, electrical, and reliability characteristics of the high- k HfO 2 film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750 o C, the single-step annealed HfO 2 has transformed into the polycrystalline phase, whereas the multi-step annealed HfO 2 is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO 2 film with respect to the grain formation process. Additionally, the density and composition of the HfO 2 film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO 2 film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO 2 gate stacks.
ISSN:1938-5862
1938-6737
DOI:10.1149/05810.0235ecst