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Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film
This study compares the physical, electrical, and reliability characteristics of the high- k HfO 2 film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750 o C, the single-step annealed HfO 2 has transformed into the polycrystalline phase, wher...
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| Published in: | ECS transactions 2013-08, Vol.58 (10), p.235-245 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Online Access: | Get full text |
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| container_end_page | 245 |
| container_issue | 10 |
| container_start_page | 235 |
| container_title | ECS transactions |
| container_volume | 58 |
| creator | Cheng, Yi-Lung Hsieh, Cheng-Yang Bo, Tian-Cih Wu, Chang-Sian Lin, Jian-Run |
| description | This study compares the physical, electrical, and reliability characteristics of the high-
k
HfO
2
film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750
o
C, the single-step annealed HfO
2
has transformed into the polycrystalline phase, whereas the multi-step annealed HfO
2
is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO
2
film with respect to the grain formation process. Additionally, the density and composition of the HfO
2
film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO
2
film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO
2
gate stacks. |
| doi_str_mv | 10.1149/05810.0235ecst |
| format | article |
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k
HfO
2
film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750
o
C, the single-step annealed HfO
2
has transformed into the polycrystalline phase, whereas the multi-step annealed HfO
2
is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO
2
film with respect to the grain formation process. Additionally, the density and composition of the HfO
2
film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO
2
film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO
2
gate stacks.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/05810.0235ecst</identifier><language>eng</language><ispartof>ECS transactions, 2013-08, Vol.58 (10), p.235-245</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cheng, Yi-Lung</creatorcontrib><creatorcontrib>Hsieh, Cheng-Yang</creatorcontrib><creatorcontrib>Bo, Tian-Cih</creatorcontrib><creatorcontrib>Wu, Chang-Sian</creatorcontrib><creatorcontrib>Lin, Jian-Run</creatorcontrib><title>Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film</title><title>ECS transactions</title><description>This study compares the physical, electrical, and reliability characteristics of the high-
k
HfO
2
film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750
o
C, the single-step annealed HfO
2
has transformed into the polycrystalline phase, whereas the multi-step annealed HfO
2
is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO
2
film with respect to the grain formation process. Additionally, the density and composition of the HfO
2
film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO
2
film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO
2
gate stacks.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqVj7tuwjAUQK0KpNKWlfl-QAN2Qh6MFQWxVFTQ3XLMjXIr5yFfd8jfFyj9AKZzljMcIWZKzpVarhYyLc4q4yRFy-FBTNQqKaIsT_LRzdMiix_FE_O3lNm5ySei_KwHJmvcK2wc2uD_3LQnOKAjU5KjMMC6Nt7YgJ44kGXoKvj4cYGiY8Ae3rHvmAJ1bfTWtmgcnmBX7SGGLbnmRYwr4xinNz6L-Xbztd5F1nfMHivde2qMH7SS-nKiryf6_yS5O_gF5lhRsw</recordid><startdate>20130831</startdate><enddate>20130831</enddate><creator>Cheng, Yi-Lung</creator><creator>Hsieh, Cheng-Yang</creator><creator>Bo, Tian-Cih</creator><creator>Wu, Chang-Sian</creator><creator>Lin, Jian-Run</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130831</creationdate><title>Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film</title><author>Cheng, Yi-Lung ; Hsieh, Cheng-Yang ; Bo, Tian-Cih ; Wu, Chang-Sian ; Lin, Jian-Run</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1149_05810_0235ecst3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Yi-Lung</creatorcontrib><creatorcontrib>Hsieh, Cheng-Yang</creatorcontrib><creatorcontrib>Bo, Tian-Cih</creatorcontrib><creatorcontrib>Wu, Chang-Sian</creatorcontrib><creatorcontrib>Lin, Jian-Run</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Yi-Lung</au><au>Hsieh, Cheng-Yang</au><au>Bo, Tian-Cih</au><au>Wu, Chang-Sian</au><au>Lin, Jian-Run</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film</atitle><jtitle>ECS transactions</jtitle><date>2013-08-31</date><risdate>2013</risdate><volume>58</volume><issue>10</issue><spage>235</spage><epage>245</epage><pages>235-245</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>This study compares the physical, electrical, and reliability characteristics of the high-
k
HfO
2
film that was fabricated by a single-step and a multiple-step deposition-annealed method. After annealing at 750
o
C, the single-step annealed HfO
2
has transformed into the polycrystalline phase, whereas the multi-step annealed HfO
2
is found to remain in a nanocrystalline phase, revealing that a multi-step deposition-annealing method could greatly improve the thermal stability of the HfO
2
film with respect to the grain formation process. Additionally, the density and composition of the HfO
2
film are enhanced by multi-step deposition-annealing process. These changes lead to an improvement in the electrical characteristics, breakdown voltage, and reliability for the multi-step deposition-annealed HfO
2
film, revealing that the multi-step deposition-annealing method is a promising means for improving the thermal stability and reliability of HfO
2
gate stacks.</abstract><doi>10.1149/05810.0235ecst</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1938-5862 |
| ispartof | ECS transactions, 2013-08, Vol.58 (10), p.235-245 |
| issn | 1938-5862 1938-6737 |
| language | eng |
| recordid | cdi_crossref_primary_10_1149_05810_0235ecst |
| source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO 2 Film |
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