Systematic Hot Spots Finding By Pattern Search with Similarity

As device rule shrinks, the finding of systematic hot spots is no longer just relied on design rule checking (DRC) and lithography rule checking (LRC). There still have some unexpected systematic hot spots impact the yield of production. Using image contour extraction technique to extract the images...

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Bibliographic Details
Published in:ECS transactions 2014, Vol.60 (1), p.279-283
Main Authors: Luoh, Tuung, Lv, Rong, Chen, Chi-min, Liao, Hsiang-Chou, Yang, Ling-Wu, Yang, Ta-hone, Chen, Kuang-Chao, Lu, Chih-Yuan
Format: Article
Language:English
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Summary:As device rule shrinks, the finding of systematic hot spots is no longer just relied on design rule checking (DRC) and lithography rule checking (LRC). There still have some unexpected systematic hot spots impact the yield of production. Using image contour extraction technique to extract the images of issued failure sites into unit clipped patterns and then do the patterns search with a similarity algorithm. Transfer these specific pattern search care areas into an in-line inspection recipe, and then prevent the failure issues happening again. Through regrouping the seed patterns after hot scan on focus exposure matrix (FEM) or process window qualification (PWQ) wafers, the exactly or similar pattern search of these seed patterns can help us to find out the unknown risky similar pattern of interests.
ISSN:1938-5862
1938-6737
DOI:10.1149/06001.0279ecst