Tb 3+ Luminescence in a-SiN x :H

Terbium doped hydrogenated amorphous silicon nitride was prepared by reactive RF-sputtering from a silicon target partially covered either with Tb 4 O 7 or metallic Tb platelets in a Ar+N 2 +H 2 atmosphere. When the samples have a high enough bandgap they present characteristic Tb 3+ luminescence. T...

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Bibliographic Details
Published in:ECS transactions 2014-03, Vol.61 (5), p.141-146
Main Authors: Bosco, Giacomo Ferreira, Tessler, Leandro R.
Format: Article
Language:English
Online Access:Get full text
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Summary:Terbium doped hydrogenated amorphous silicon nitride was prepared by reactive RF-sputtering from a silicon target partially covered either with Tb 4 O 7 or metallic Tb platelets in a Ar+N 2 +H 2 atmosphere. When the samples have a high enough bandgap they present characteristic Tb 3+ luminescence. The luminescence intensity depends on the annealing temperature. For a given smaple, the luminescence intensity under non-resonant excitation is 10 to 20 times smaller than under resonant excitation of Tb 3+ . The luminescence intensity under resonant excitation slightly increases with temperature, while under non-resonant excitation it decreases with temperature.. These results are interpreted as due to very effective intra-4f radiative recombination processes in Tb 3+ in a-SiN x :H. However, the excitation transfer from the matrix is inefficient or our samples are not yet fully optimized for it.
ISSN:1938-5862
1938-6737
DOI:10.1149/06105.0141ecst