SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging

In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-...

Full description

Saved in:
Bibliographic Details
Main Authors: Ranstad, Per, Giezendanner, Florian, Bakowski, Mietek, Lim, Jang-Kwon, Tolstoy, Georg, Ranstad, Anton
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 59
container_issue 7
container_start_page 51
container_title
container_volume 64
creator Ranstad, Per
Giezendanner, Florian
Bakowski, Mietek
Lim, Jang-Kwon
Tolstoy, Georg
Ranstad, Anton
description In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.
doi_str_mv 10.1149/06407.0051ecst
format conference_proceeding
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_06407_0051ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/06407.0051ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c303t-dd4b32e27408174ab7a43b69e80a1361fe74d63fcd4b41743f70fe3f24e231b63</originalsourceid><addsrcrecordid>eNp1kM9LwzAUx4MoOKdXzzmLrUmTJe1x1F-DwQbVc0jTl5k5m5J0G_73dm4ePb3Hl8_n8fgidEtJSikvHojgRKaETCiY2J-hES1YngjJ5Plpn-Qiu0RXMa4JEYMjR2hRuRIv_R4CfoSdMxCxa7HGlbc9rvauNx-uXeHStzsIPYR7PGvNZtscwmnswPQR-xYvtfnUqyG8RhdWbyLcnOYYvT8_vZWvyXzxMiun88QwwvqkaXjNMsgkJzmVXNdSc1aLAnKiKRPUguSNYNYMHB8AZiWxwGzGIWO0FmyM0uNdE3yMAazqgvvS4VtRog51qN861F8dg3B3FJzv1NpvQzu89x_8A-4QYCg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Ranstad, Per ; Giezendanner, Florian ; Bakowski, Mietek ; Lim, Jang-Kwon ; Tolstoy, Georg ; Ranstad, Anton</creator><creatorcontrib>Ranstad, Per ; Giezendanner, Florian ; Bakowski, Mietek ; Lim, Jang-Kwon ; Tolstoy, Georg ; Ranstad, Anton</creatorcontrib><description>In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/06407.0051ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2014, Vol.64 (7), p.51-59</ispartof><rights>2014 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Ranstad, Per</creatorcontrib><creatorcontrib>Giezendanner, Florian</creatorcontrib><creatorcontrib>Bakowski, Mietek</creatorcontrib><creatorcontrib>Lim, Jang-Kwon</creatorcontrib><creatorcontrib>Tolstoy, Georg</creatorcontrib><creatorcontrib>Ranstad, Anton</creatorcontrib><title>SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNp1kM9LwzAUx4MoOKdXzzmLrUmTJe1x1F-DwQbVc0jTl5k5m5J0G_73dm4ePb3Hl8_n8fgidEtJSikvHojgRKaETCiY2J-hES1YngjJ5Plpn-Qiu0RXMa4JEYMjR2hRuRIv_R4CfoSdMxCxa7HGlbc9rvauNx-uXeHStzsIPYR7PGvNZtscwmnswPQR-xYvtfnUqyG8RhdWbyLcnOYYvT8_vZWvyXzxMiun88QwwvqkaXjNMsgkJzmVXNdSc1aLAnKiKRPUguSNYNYMHB8AZiWxwGzGIWO0FmyM0uNdE3yMAazqgvvS4VtRog51qN861F8dg3B3FJzv1NpvQzu89x_8A-4QYCg</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Ranstad, Per</creator><creator>Giezendanner, Florian</creator><creator>Bakowski, Mietek</creator><creator>Lim, Jang-Kwon</creator><creator>Tolstoy, Georg</creator><creator>Ranstad, Anton</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20140101</creationdate><title>SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging</title><author>Ranstad, Per ; Giezendanner, Florian ; Bakowski, Mietek ; Lim, Jang-Kwon ; Tolstoy, Georg ; Ranstad, Anton</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c303t-dd4b32e27408174ab7a43b69e80a1361fe74d63fcd4b41743f70fe3f24e231b63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Ranstad, Per</creatorcontrib><creatorcontrib>Giezendanner, Florian</creatorcontrib><creatorcontrib>Bakowski, Mietek</creatorcontrib><creatorcontrib>Lim, Jang-Kwon</creatorcontrib><creatorcontrib>Tolstoy, Georg</creatorcontrib><creatorcontrib>Ranstad, Anton</creatorcontrib><collection>CrossRef</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ranstad, Per</au><au>Giezendanner, Florian</au><au>Bakowski, Mietek</au><au>Lim, Jang-Kwon</au><au>Tolstoy, Georg</au><au>Ranstad, Anton</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging</atitle><btitle>ECS transactions</btitle><addtitle>ECS Trans</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>64</volume><issue>7</issue><spage>51</spage><epage>59</epage><pages>51-59</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>In many applications of power electronic converters efficiency and size are important figures of merit. Low losses in the power semiconductors as well as high frequency operation are important factors to obtain compact and highly efficient converters. The converters considered in this paper are off-line industrial power supplies (~100 kW) operating at a switching frequency range of 20-40 kHz. Replacing Si power devices by SiC counterparts enables both lower losses and increased switching frequencies. In this paper, experimental results from SiC PiN diodes, (output rectifiers) and SiC MOSFETs, (active switches) are presented.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/06407.0051ecst</doi><tpages>9</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2014, Vol.64 (7), p.51-59
issn 1938-5862
1938-6737
language eng
recordid cdi_crossref_primary_10_1149_06407_0051ecst
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title SiC Power Devices in a Soft Switching Converter, Including Aspects on Packaging
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T01%3A03%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=SiC%20Power%20Devices%20in%20a%20Soft%20Switching%20Converter,%20Including%20Aspects%20on%20Packaging&rft.btitle=ECS%20transactions&rft.au=Ranstad,%20Per&rft.date=2014-01-01&rft.volume=64&rft.issue=7&rft.spage=51&rft.epage=59&rft.pages=51-59&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/06407.0051ecst&rft_dat=%3Ciop_cross%3E10.1149/06407.0051ecst%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c303t-dd4b32e27408174ab7a43b69e80a1361fe74d63fcd4b41743f70fe3f24e231b63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true