Study of Y 2 O 3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Y 2 O 3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp 3 ) 3 Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cy...

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Bibliographic Details
Published in:ECS transactions 2014-08, Vol.64 (9), p.15-21
Main Authors: Cho, Gu Young, Noh, Seungtak, Lee, Yoon Ho, Ji, Sanghoon, Cha, Suk Won
Format: Article
Language:English
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Summary:Y 2 O 3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp 3 ) 3 Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175¢ªC to 325¢ªC. The crystallinity and density of Y 2 O 3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y 2 O 3 thin films are in range of 15~17 calculated by capacitance – voltage characteristics.
ISSN:1938-5862
1938-6737
DOI:10.1149/06409.0015ecst