(Invited) High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on 200mm Si Substrates

Crack-free AlGaN/GaN heterostructure field-effect transistors on a 200 mm silicon substrate were demonstrated to enable large-volume, low-cost manufacturing technology for GaN power electronics. Low normalized buffer leakage of around 3 × 10 -9 A/mm and low normalized three-terminal subthreshold lea...

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Bibliographic Details
Published in:ECS transactions 2015-04, Vol.66 (1), p.191-199
Main Authors: Lo, C.-F., Laboutin, O., Kao, C.-K., O'Connor, K., Hill, D., Johnson, W.
Format: Article
Language:eng ; jpn
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Summary:Crack-free AlGaN/GaN heterostructure field-effect transistors on a 200 mm silicon substrate were demonstrated to enable large-volume, low-cost manufacturing technology for GaN power electronics. Low normalized buffer leakage of around 3 × 10 -9 A/mm and low normalized three-terminal subthreshold leakage of around 2 × 10 -7 A/mm were obtained using highly carbon-doped buffer epilayers. A high three-terminal off-state breakdown voltage of 1.35 kV and a low specific on-resistance of 1.3 mohm-cm 2 were achieved on the 4.5-µm-thick device with a 10 µm gate-to-drain spacing. The figure of merit of our device is calculated as 1.4×10 9 V 2 ohm -1 cm -2
ISSN:1938-5862
1938-6737
DOI:10.1149/06601.0191ecst