Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells

Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of f...

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Published in:ECS transactions 2015-09, Vol.69 (7), p.31-37
Main Authors: Illiberi, A., Frijters, Corne, Balder, Ellis, Poodt, Paul, Roozeboom, Fred
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Language:English
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container_issue 7
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container_title ECS transactions
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creator Illiberi, A.
Frijters, Corne
Balder, Ellis
Poodt, Paul
Roozeboom, Fred
description Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_06907_0031ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/06907.0031ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c266t-4220b0bfbafa9e494da0f271e2acbd33a15b2563565a45588d496c7a8548c303</originalsourceid><addsrcrecordid>eNp1jz1PwzAURS0EEqWwMntGSvF34jEKtFSKxJDu1otji1RpHdnp0H9PoGVkeld691zpIPRMyYpSoV-J0iRfEcKps2m6QQuqeZGpnOe31ywLxe7RQ0p7QtTM5AtUNiNMPQy4nA4hjV8u9haX9RsOHq9PRzv14Th_azi7mLAPEVfbTYObMMAc3TCkR3TnYUju6XqXaLd-31UfWf252VZlnVmm1JQJxkhLWt-CB-2EFh0Qz3LqGNi24xyobJlUXCoJQsqi6IRWNodCisJywpdodZm1MaQUnTdj7A8Qz4YS8-Nvfv3Nn_8MvFyAPoxmH05x9kj_lb8BcrVagA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Illiberi, A. ; Frijters, Corne ; Balder, Ellis ; Poodt, Paul ; Roozeboom, Fred</creator><creatorcontrib>Illiberi, A. ; Frijters, Corne ; Balder, Ellis ; Poodt, Paul ; Roozeboom, Fred</creatorcontrib><description>Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/06907.0031ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2015-09, Vol.69 (7), p.31-37</ispartof><rights>2015 ECS - The Electrochemical Society</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c266t-4220b0bfbafa9e494da0f271e2acbd33a15b2563565a45588d496c7a8548c303</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Illiberi, A.</creatorcontrib><creatorcontrib>Frijters, Corne</creatorcontrib><creatorcontrib>Balder, Ellis</creatorcontrib><creatorcontrib>Poodt, Paul</creatorcontrib><creatorcontrib>Roozeboom, Fred</creatorcontrib><title>Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1jz1PwzAURS0EEqWwMntGSvF34jEKtFSKxJDu1otji1RpHdnp0H9PoGVkeld691zpIPRMyYpSoV-J0iRfEcKps2m6QQuqeZGpnOe31ywLxe7RQ0p7QtTM5AtUNiNMPQy4nA4hjV8u9haX9RsOHq9PRzv14Th_azi7mLAPEVfbTYObMMAc3TCkR3TnYUju6XqXaLd-31UfWf252VZlnVmm1JQJxkhLWt-CB-2EFh0Qz3LqGNi24xyobJlUXCoJQsqi6IRWNodCisJywpdodZm1MaQUnTdj7A8Qz4YS8-Nvfv3Nn_8MvFyAPoxmH05x9kj_lb8BcrVagA</recordid><startdate>20150910</startdate><enddate>20150910</enddate><creator>Illiberi, A.</creator><creator>Frijters, Corne</creator><creator>Balder, Ellis</creator><creator>Poodt, Paul</creator><creator>Roozeboom, Fred</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150910</creationdate><title>Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells</title><author>Illiberi, A. ; Frijters, Corne ; Balder, Ellis ; Poodt, Paul ; Roozeboom, Fred</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c266t-4220b0bfbafa9e494da0f271e2acbd33a15b2563565a45588d496c7a8548c303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Illiberi, A.</creatorcontrib><creatorcontrib>Frijters, Corne</creatorcontrib><creatorcontrib>Balder, Ellis</creatorcontrib><creatorcontrib>Poodt, Paul</creatorcontrib><creatorcontrib>Roozeboom, Fred</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Illiberi, A.</au><au>Frijters, Corne</au><au>Balder, Ellis</au><au>Poodt, Paul</au><au>Roozeboom, Fred</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells</atitle><jtitle>ECS transactions</jtitle><addtitle>ECS Trans</addtitle><date>2015-09-10</date><risdate>2015</risdate><volume>69</volume><issue>7</issue><spage>31</spage><epage>37</epage><pages>31-37</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Spatial Atmospheric Atomic Layer Deposition combines the advantages of temporal ALD, i.e. excellent control of film composition and uniformity over large area substrates, with high growth rates (up to nm/s). In this paper we present a short overview of our research activity carried out on S-ALD of functional thin films for the front window of copper indium gallium di-selenide (CIGS) solar cells. Zn(O,S) and ZnO:Al are grown by co-injecting the vaporized precursors of the cationic (O, S) and anionic (Zn, Al) elements, respectively. An insight on the growth characteristics and properties of Zn(O,S) and ZnO:Al is presented.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/06907.0031ecst</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
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title Spatial Atmospheric ALD of Functional Layers for CIGS Solar Cells
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T13%3A14%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Spatial%20Atmospheric%20ALD%20of%20Functional%20Layers%20for%20CIGS%20Solar%20Cells&rft.jtitle=ECS%20transactions&rft.au=Illiberi,%20A.&rft.date=2015-09-10&rft.volume=69&rft.issue=7&rft.spage=31&rft.epage=37&rft.pages=31-37&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/06907.0031ecst&rft_dat=%3Ciop_cross%3E10.1149/06907.0031ecst%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c266t-4220b0bfbafa9e494da0f271e2acbd33a15b2563565a45588d496c7a8548c303%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true