Nanoscale Etching: Dissolution of III-As and Ge in HCl/H 2 O 2 Solutions

In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H 2 O 2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etch...

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Bibliographic Details
Published in:ECS transactions 2015-09, Vol.69 (8), p.235-242
Main Authors: van Dorp, Dennis H., Weinberger, David, Van Wonterghem, Simon, Arnauts, Sophia, Strubbe, Katrien, Holsteyns, Frank, De Gendt, Stefan
Format: Article
Language:English
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Summary:In this work the etching kinetics of (100) III-As is studied at the nanoscale with ICP-MS for various HCl/H 2 O 2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. The surface termination during etching has strong impact on the etching kinetics. A similar effect was observed for Ge. The Ge (100) surface is sensitive to surface roughening during etching and reoxidation after native oxide removal.
ISSN:1938-5862
1938-6737
DOI:10.1149/06908.0235ecst