Mechanisms and Development of Ceria-Based, Fast Oxide Slurries

Recent developments in vertical integration schemes including 3D-NAND flash memory have introduced a significant need for fast oxide slurries (1). Specifically, the new staircase CMP process requires exceptionally large step heights to be polished in a timely manner. Balancing low defectivity and hi...

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Bibliographic Details
Main Authors: Urban, Nathaniel D, Dickmann, Dan, Her, Bob, Santora, Brian
Format: Conference Proceeding
Language:English
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Summary:Recent developments in vertical integration schemes including 3D-NAND flash memory have introduced a significant need for fast oxide slurries (1). Specifically, the new staircase CMP process requires exceptionally large step heights to be polished in a timely manner. Balancing low defectivity and high planarization efficiency with extremely fast bulk oxide removal rates is a difficult but crucial set of requirements. Ceria-based slurries with fine-tuned chemistries are well suited to meet these challenges. Mechanisms for ceria-based slurries polishing behavior on oxide surfaces have been the subject of investigation for a number of years now. A careful examination of these proposed mechanisms can drive the design and development of next generation fast oxide slurries.
ISSN:1938-5862
1938-6737
DOI:10.1149/07218.0037ecst