Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing tempera...

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Bibliographic Details
Main Authors: Liu, Po-Tsun, Chang, Chih-Hsiang, Zheng, Guang-Ting, Chang, Che-Chia
Format: Conference Proceeding
Language:English
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Summary:We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm2/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.
ISSN:1938-5862
1938-6737
DOI:10.1149/07510.0163ecst