Ultra-High Purity Hydrazine Delivery for Low Temperature Metal Nitride ALD

There is an emerging need for sub-400°C metal nitride deposition due to thermal sensitivity of new materials for logic and memory devices. University studies have shown hydrazine to be a viable precursor for low temperature ALD. A novel high-purity hydrazine delivery system has been developed in res...

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Bibliographic Details
Published in:ECS transactions 2017-04, Vol.77 (5), p.219-225
Main Authors: Alvarez, Daniel, Spiegelman, Jeffrey, Holmes, Russell, Andachi, Keisuke, Raynor, Mark, Shimizu, Hank
Format: Article
Language:English
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Summary:There is an emerging need for sub-400°C metal nitride deposition due to thermal sensitivity of new materials for logic and memory devices. University studies have shown hydrazine to be a viable precursor for low temperature ALD. A novel high-purity hydrazine delivery system has been developed in response to market need. Initial tests show significant reduction in oxygen in TiNx films using this system.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/07705.0219ecst