Adjustable Silicon Corner Rounding Radius by Wet Technique

Shallow trench isolation (STI) and active area (AA) top cornerrounding is important to device performance. AA top cornerrounding techniques include STI etch [1], linear oxidation [2], H2annealing [3] and wet oxide pull back (PB). However,conventional STI etch will caused AA facet and needs additiona...

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Bibliographic Details
Main Authors: Tou, Pei-Ting, Liao, Hsin-Yi, Huang, Hui-Chin, Shih, Kai-Yao, Lu, Ming-Chen
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Shallow trench isolation (STI) and active area (AA) top cornerrounding is important to device performance. AA top cornerrounding techniques include STI etch [1], linear oxidation [2], H2annealing [3] and wet oxide pull back (PB). However,conventional STI etch will caused AA facet and needs additionalthermal in liner oxidation or H2 annealing processes. Wet oxide PBeasily controls the pad oxide etching amount and reaches thedesired AA top corner top rounding radius. In this study, differentpad oxide PB was achieved by hydrogen fluoride (HF) etching andcorrelated with corner rounding. For high pad oxide PB, additionalhydrogen peroxide (H2O2) with dilute HF (DHF) can optimize theAA top corner profile and enlarge the corner radius.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08506.0171ecst