Optimization of Source/Drain Schottky Barrier Height on BE SOI MOSFET

This paper studies the influence of the Schottky barrier height between source/drain and contact metal on the drain current level on BE SOI MOSFET. This is a reconfigurable transistor, i.e., it can act as an n-type or a p-type transistor depending on the substrate bias. However, the drain current of...

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Bibliographic Details
Published in:ECS transactions 2018-04, Vol.85 (8), p.79-84
Main Authors: Yojo, Leonardo Shimizu, Rangel, Ricardo Cardoso, Sasaki, Katia Regina Akemi, Martino, Joao Antonio
Format: Article
Language:English
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Summary:This paper studies the influence of the Schottky barrier height between source/drain and contact metal on the drain current level on BE SOI MOSFET. This is a reconfigurable transistor, i.e., it can act as an n-type or a p-type transistor depending on the substrate bias. However, the drain current of both types proved to be dependent on the material of the drain/source contact. It was found by simulation that for a metal workfunction of 4.57 V the current level of the n-type and p-type transistors are similar.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08508.0079ecst