BEOL Compatible High-Capacitance MIMCAP Structure Using a Novel High k Material

We demonstrate a MIM capacitor structure using ZrO2 for the dielectric layer. This exhibits a 25% capacitance increase with minimal leakage current increase compared to Hf based dielectrics, extending the usefulness of MIM on-chip decoupling capacitors. The MIM structure, suitable for BEOL processin...

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Bibliographic Details
Published in:ECS transactions 2020-04, Vol.97 (3), p.81-92
Main Authors: Jamison, Paul C., Massey, John, Ando, Takashi, Cartier, Eduard A., Jagannathan, Hemanth, Chen, P. J., Liu, Eric, Romero, Alex, Naczas, Sebastian, Narayanan, Vijay, Pancharatnam, Shanti, Restle, Phillip, Rubin, Joshua, Loubet, Nicolas J, Choi, Kisik
Format: Article
Language:English
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Summary:We demonstrate a MIM capacitor structure using ZrO2 for the dielectric layer. This exhibits a 25% capacitance increase with minimal leakage current increase compared to Hf based dielectrics, extending the usefulness of MIM on-chip decoupling capacitors. The MIM structure, suitable for BEOL processing is TiN/ZrO2/TiN combined with an anneal which is shown to improve the capacitance vs. leakage performance compared to doped and undoped HfO2 based control structures. GI-XRD measurements demonstrate that the capacitance increase corresponds with a phase transformation from amorphous to cubic phase, which is shown to have a dielectric constant (k) up to 35. Reliability models based on hard-breakdown (HBD) show that this structure exceeds the end-of-life targets.
ISSN:1938-5862
1938-6737
DOI:10.1149/09703.0081ecst