Study of a Charge-Based Biosensor and Reconfigurability using BE SOI MOSFET

The Back Enhance ( BE ) SOI MOSFET is a device whose operation can be tuned by the back gate bias (V GB ), i.e., it can act as an n- or p-type MOSFET if V GB is positive or negative enough, respectively. This characteristic was explored in the bio-sensing application, in which a charge-based sensor...

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Bibliographic Details
Published in:ECS transactions 2020-04, Vol.97 (5), p.115-120
Main Authors: Yojo, Leonardo Shimizu, Rangel, Ricardo Cardoso, Sasaki, Katia Regina Akemi, Martino, Joao Antonio
Format: Article
Language:English
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Summary:The Back Enhance ( BE ) SOI MOSFET is a device whose operation can be tuned by the back gate bias (V GB ), i.e., it can act as an n- or p-type MOSFET if V GB is positive or negative enough, respectively. This characteristic was explored in the bio-sensing application, in which a charge-based sensor was studied through simulation. Physical dimensions (gate and underlap lengths, gate oxide, silicon and buried oxide thicknesses) were varied in order to determine the most sensitive case. The buried oxide thickness presented highest variation in the results, showing the importance of the substrate on its operation. The biomaterial charge concentration analysis showed a better sensitivity of the device for positive charges when biased as an n-type transistor, while the p-type bias presented better sensitivity to negative charges. Thus, the versatility of the BE SOI MOSFET can be used as an advantage in the field of biosensors.
ISSN:1938-5862
1938-6737
DOI:10.1149/09705.0115ecst