Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation

The ternary alloy semiconductor Si x Ge 1-x-y Sn y presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. Si x Ge 1-x-y Sn y offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandga...

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Published in:ECS transactions 2020-09, Vol.98 (5), p.339-349
Main Authors: Schwarz, Daniel, Funk, Hannes Simon, Guguieva, Kateryna, Oehme, Michael, Schulze, Joerg
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Funk, Hannes Simon
Guguieva, Kateryna
Oehme, Michael
Schulze, Joerg
description The ternary alloy semiconductor Si x Ge 1-x-y Sn y presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. Si x Ge 1-x-y Sn y offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- Si x Ge 1-x-y Sn y hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the Si x Ge 1-x-y Sn y growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the Si x Ge 1-x-y Sn y composition.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1149_09805_0339ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1149_09805_0339ecst</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1149_09805_0339ecst3</originalsourceid><addsrcrecordid>eNqVj81OwzAQhC0EEuXnynlfwMEmND9XQmkvORVxtVZmA65SO_K6ouHpSVB5AE4zo5k5fELcaZVp_Vjfq7pSy0zleU2W05lY6DqvZFHm5fnJL6vi4VJcMe-UKqZPuRDfDQ5oXUJvSb6FPuEHQUvIh0h78okheGifVnIdw5eHNcmtg-OkoOVRjrD1MMKGEsWwO3ib3DQfvHx24Z0YuhChxal02EPziRHtHBjn3Y246LBnuj3ptcheVq_NRtoYmCN1Zohuj3E0WpmZ0PwSmj_C_N-HHz3AWiU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation</title><source>Institute of Physics</source><creator>Schwarz, Daniel ; Funk, Hannes Simon ; Guguieva, Kateryna ; Oehme, Michael ; Schulze, Joerg</creator><creatorcontrib>Schwarz, Daniel ; Funk, Hannes Simon ; Guguieva, Kateryna ; Oehme, Michael ; Schulze, Joerg</creatorcontrib><description>The ternary alloy semiconductor Si x Ge 1-x-y Sn y presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. Si x Ge 1-x-y Sn y offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- Si x Ge 1-x-y Sn y hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the Si x Ge 1-x-y Sn y growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the Si x Ge 1-x-y Sn y composition.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/09805.0339ecst</identifier><language>eng</language><ispartof>ECS transactions, 2020-09, Vol.98 (5), p.339-349</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-2702-4697</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Schwarz, Daniel</creatorcontrib><creatorcontrib>Funk, Hannes Simon</creatorcontrib><creatorcontrib>Guguieva, Kateryna</creatorcontrib><creatorcontrib>Oehme, Michael</creatorcontrib><creatorcontrib>Schulze, Joerg</creatorcontrib><title>Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation</title><title>ECS transactions</title><description>The ternary alloy semiconductor Si x Ge 1-x-y Sn y presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. Si x Ge 1-x-y Sn y offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- Si x Ge 1-x-y Sn y hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the Si x Ge 1-x-y Sn y growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the Si x Ge 1-x-y Sn y composition.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqVj81OwzAQhC0EEuXnynlfwMEmND9XQmkvORVxtVZmA65SO_K6ouHpSVB5AE4zo5k5fELcaZVp_Vjfq7pSy0zleU2W05lY6DqvZFHm5fnJL6vi4VJcMe-UKqZPuRDfDQ5oXUJvSb6FPuEHQUvIh0h78okheGifVnIdw5eHNcmtg-OkoOVRjrD1MMKGEsWwO3ib3DQfvHx24Z0YuhChxal02EPziRHtHBjn3Y246LBnuj3ptcheVq_NRtoYmCN1Zohuj3E0WpmZ0PwSmj_C_N-HHz3AWiU</recordid><startdate>20200908</startdate><enddate>20200908</enddate><creator>Schwarz, Daniel</creator><creator>Funk, Hannes Simon</creator><creator>Guguieva, Kateryna</creator><creator>Oehme, Michael</creator><creator>Schulze, Joerg</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-2702-4697</orcidid></search><sort><creationdate>20200908</creationdate><title>Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation</title><author>Schwarz, Daniel ; Funk, Hannes Simon ; Guguieva, Kateryna ; Oehme, Michael ; Schulze, Joerg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1149_09805_0339ecst3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Schwarz, Daniel</creatorcontrib><creatorcontrib>Funk, Hannes Simon</creatorcontrib><creatorcontrib>Guguieva, Kateryna</creatorcontrib><creatorcontrib>Oehme, Michael</creatorcontrib><creatorcontrib>Schulze, Joerg</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schwarz, Daniel</au><au>Funk, Hannes Simon</au><au>Guguieva, Kateryna</au><au>Oehme, Michael</au><au>Schulze, Joerg</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation</atitle><jtitle>ECS transactions</jtitle><date>2020-09-08</date><risdate>2020</risdate><volume>98</volume><issue>5</issue><spage>339</spage><epage>349</epage><pages>339-349</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>The ternary alloy semiconductor Si x Ge 1-x-y Sn y presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. Si x Ge 1-x-y Sn y offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication, and electrical characterisation of lattice-matched Ge- Si x Ge 1-x-y Sn y hetero-junction devices with a Sn concentration up to 12.5 %. The X-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the Si x Ge 1-x-y Sn y growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the Si x Ge 1-x-y Sn y composition.</abstract><doi>10.1149/09805.0339ecst</doi><orcidid>https://orcid.org/0000-0003-2702-4697</orcidid></addata></record>
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title Capacitance-Voltage Measurements on MBE-Grown Ge-Si x Ge 1-x-y Sn y Heterojunction pn-Diodes for Material Characterisation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T17%3A25%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Capacitance-Voltage%20Measurements%20on%20MBE-Grown%20Ge-Si%20x%20Ge%201-x-y%20Sn%20y%20Heterojunction%20pn-Diodes%20for%20Material%20Characterisation&rft.jtitle=ECS%20transactions&rft.au=Schwarz,%20Daniel&rft.date=2020-09-08&rft.volume=98&rft.issue=5&rft.spage=339&rft.epage=349&rft.pages=339-349&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/09805.0339ecst&rft_dat=%3Ccrossref%3E10_1149_09805_0339ecst%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-crossref_primary_10_1149_09805_0339ecst3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true