(Invited) Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate

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Bibliographic Details
Published in:ECS transactions 2021-10, Vol.104 (4), p.27-31
Main Author: Nagase, Masao
Format: Article
Language:eng ; jpn
Online Access:Get full text
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ISSN:1938-5862
1938-6737
DOI:10.1149/10404.0027ecst