(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality

• Published in: ECS transactions 2022-05, Vol.108 (2), p.43-49, Article 43
• Main Authors: Renz, Arne Benjamin Benjamin, Vavasour, Oliver J, Gammon, Peter Michael, Li, Fan, Dai, Tianxiang, Baker, Guy W C, Grant, Nicholas E, Murphy, John D, Mawby, P. A., Shah, Vishal Ajit, Gott, James
• Format: Article
• Language: English
• ISSN: 1938-5862; 1938-6737; 1938-6737
• DOI: 10.1149/10802.0043ecst

An investigation into the effect of deposition, growth and conditioning of the SiO2/SiC interface in MOS capacitors is performed, where the enhancement of reliability is characterised. Various methods of oxide formation are compared: ALD, LPCVD and thermally grown. ALD-deposited oxides were post-deposition annealed in nitrous oxide ambient, resulting in average flatband voltages of 0.63 V and low D IT levels, down to 7 x 10 11 cm -2 eV -1 at E C -E T =0.2 eV. These samples also outperformed their counterparts in terms of high leakage and constant voltage TDDB performance, which was done at 175°C, averaging breakdown electric fields of 9.84 MV/cm and a 63% failure stress time of 11220 s when stressed at 8 MV/cm.