(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era

Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scatt...

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Bibliographic Details
Published in:ECS transactions 2022-09, Vol.109 (4), p.59-71
Main Authors: Takagi, Shinichi, Chen, Chia-Tsong, Han, Xueyang, Sumita, Kei, Toprasertpong, Kasidit, Takenaka, Mitsuru
Format: Article
Language:English
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Summary:Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.
ISSN:1938-5862
1938-6737
DOI:10.1149/10904.0059ecst