(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era

Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scatt...

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Published in:ECS transactions 2022-09, Vol.109 (4), p.59-71
Main Authors: Takagi, Shinichi, Chen, Chia-Tsong, Han, Xueyang, Sumita, Kei, Toprasertpong, Kasidit, Takenaka, Mitsuru
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container_issue 4
container_start_page 59
container_title ECS transactions
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creator Takagi, Shinichi
Chen, Chia-Tsong
Han, Xueyang
Sumita, Kei
Toprasertpong, Kasidit
Takenaka, Mitsuru
description Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_10904_0059ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/10904.0059ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-c210t-ab0a011391975c9917079a2aed358e504c5bcf9dcd128e2a72cc8a7c5f383eba3</originalsourceid><addsrcrecordid>eNp1kDFPwzAQRi0EEqWwMnsEpIRzHMfxCFUoRRUMhDlynAtJldqVExD59wRaRqY76fve6fQIuWQQMharWwYK4hBAKDT9cERmTPE0SCSXx4ddpEl0Ss76fgOQTIyckaerlf1sB6yuafY1eNxiNwZ501p676qRLl1LF422Fjuao2ms69z7SKf4WVsXvDaIA33Icpp5fU5Oat31eHGYc_I2JYvHYP2yXC3u1oGJGAyBLkEDY1wxJYVRikmQSkcaKy5SFBAbUZpaVaZiUYqRlpExqZZG1DzlWGo-J-H-rvGu7z3Wxc63W-3HgkHxY6L4NVH8mZiAmz3Qul2xcR_eTu_9V_4GUPVeIA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era</title><source>Institute of Physics</source><creator>Takagi, Shinichi ; Chen, Chia-Tsong ; Han, Xueyang ; Sumita, Kei ; Toprasertpong, Kasidit ; Takenaka, Mitsuru</creator><creatorcontrib>Takagi, Shinichi ; Chen, Chia-Tsong ; Han, Xueyang ; Sumita, Kei ; Toprasertpong, Kasidit ; Takenaka, Mitsuru</creatorcontrib><description>Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/10904.0059ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2022-09, Vol.109 (4), p.59-71</ispartof><rights>2022 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-4206-8698</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids></links><search><creatorcontrib>Takagi, Shinichi</creatorcontrib><creatorcontrib>Chen, Chia-Tsong</creatorcontrib><creatorcontrib>Han, Xueyang</creatorcontrib><creatorcontrib>Sumita, Kei</creatorcontrib><creatorcontrib>Toprasertpong, Kasidit</creatorcontrib><creatorcontrib>Takenaka, Mitsuru</creatorcontrib><title>(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kDFPwzAQRi0EEqWwMnsEpIRzHMfxCFUoRRUMhDlynAtJldqVExD59wRaRqY76fve6fQIuWQQMharWwYK4hBAKDT9cERmTPE0SCSXx4ddpEl0Ss76fgOQTIyckaerlf1sB6yuafY1eNxiNwZ501p676qRLl1LF422Fjuao2ms69z7SKf4WVsXvDaIA33Icpp5fU5Oat31eHGYc_I2JYvHYP2yXC3u1oGJGAyBLkEDY1wxJYVRikmQSkcaKy5SFBAbUZpaVaZiUYqRlpExqZZG1DzlWGo-J-H-rvGu7z3Wxc63W-3HgkHxY6L4NVH8mZiAmz3Qul2xcR_eTu_9V_4GUPVeIA</recordid><startdate>20220930</startdate><enddate>20220930</enddate><creator>Takagi, Shinichi</creator><creator>Chen, Chia-Tsong</creator><creator>Han, Xueyang</creator><creator>Sumita, Kei</creator><creator>Toprasertpong, Kasidit</creator><creator>Takenaka, Mitsuru</creator><general>The Electrochemical Society, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-4206-8698</orcidid></search><sort><creationdate>20220930</creationdate><title>(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era</title><author>Takagi, Shinichi ; Chen, Chia-Tsong ; Han, Xueyang ; Sumita, Kei ; Toprasertpong, Kasidit ; Takenaka, Mitsuru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c210t-ab0a011391975c9917079a2aed358e504c5bcf9dcd128e2a72cc8a7c5f383eba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Takagi, Shinichi</creatorcontrib><creatorcontrib>Chen, Chia-Tsong</creatorcontrib><creatorcontrib>Han, Xueyang</creatorcontrib><creatorcontrib>Sumita, Kei</creatorcontrib><creatorcontrib>Toprasertpong, Kasidit</creatorcontrib><creatorcontrib>Takenaka, Mitsuru</creatorcontrib><collection>CrossRef</collection><jtitle>ECS transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takagi, Shinichi</au><au>Chen, Chia-Tsong</au><au>Han, Xueyang</au><au>Sumita, Kei</au><au>Toprasertpong, Kasidit</au><au>Takenaka, Mitsuru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era</atitle><jtitle>ECS transactions</jtitle><addtitle>ECS Trans</addtitle><date>2022-09-30</date><risdate>2022</risdate><volume>109</volume><issue>4</issue><spage>59</spage><epage>71</epage><pages>59-71</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Extremely-thin body (ETB) nano-sheet CMOS is expected as a device structure to realize future continuous scaling. Thus, channel materials to maintain high mobility in such an ETB channel are strongly needed. It is revealed through analyses based on a new physical model of thickness fluctuation scattering that ETB GOI channels, particularly (111) GOI channels, are promising for this purpose. High-quality ETB GOI channels are formed by the Ge condensation and smart-cut technology. The operations of Ge p- and n-MOSFETs with the body thickness down to 2 nm are experimentally demonstrated and the body thickness dependencies of the effective mobility are examined. The importance of strain and surface orientation engineering on mobility in an ETB region is addressed.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/10904.0059ecst</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0003-4206-8698</orcidid></addata></record>
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title (Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T23%3A10%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=(Invited)%20Extremely-Thin%20Body%20Goi%20Channel%20Technology%20in%20Nano-Sheet%20FET%20Era&rft.jtitle=ECS%20transactions&rft.au=Takagi,%20Shinichi&rft.date=2022-09-30&rft.volume=109&rft.issue=4&rft.spage=59&rft.epage=71&rft.pages=59-71&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/10904.0059ecst&rft_dat=%3Ciop_cross%3E10.1149/10904.0059ecst%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c210t-ab0a011391975c9917079a2aed358e504c5bcf9dcd128e2a72cc8a7c5f383eba3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true