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Photoelectrochemical Performance of S,N-Codoped TiO 2 Films Supported on Ti and their Enhanced Photoelectrocatalytic Activity in the Generation of Hydroxyl Radicals
New photoanodes for recalcitrant pollutant degradation should harvest photons from a wide region of the solar spectrum and promote a direct water oxidation reaction towards the hydroxyl radical generation. For this purpose, sulfur, nitrogen-codoped titanium dioxide (S,N-TiO 2 ) films were prepared w...
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Published in: | Journal of the Electrochemical Society 2020-12, Vol.167 (16), p.166514 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | New photoanodes for recalcitrant pollutant degradation should harvest photons from a wide region of the solar spectrum and promote a direct water oxidation reaction towards the hydroxyl radical generation. For this purpose, sulfur, nitrogen-codoped titanium dioxide (S,N-TiO
2
) films were prepared with different sulfur percentages (1.0, 2.5 and 5.0 at.%) on Ti expanded meshes by sol-gel dip-coating followed by thermal treatment at 400 °C. The morphology, composition, oxidation states of dopants, structural features, optical and semiconducting properties of S,N-TiO
2
were used for the materials characterization. While sulfur was found as S
4+
or S
6+
cations related to surface doping, nitrogen appears as N
3−
anion occupying substitutional positions in TiO
2
. This caused an improvement in the photoelectrochemical response of TiO
2
related to a decrease of up to 0.25 eV in the optical band gap and the alignments of the TiO
2
band structure. S,N-TiO
2
films exhibit significantly higher photoelectrocatalytic activity towards
·
OH generation under UV–vis light irradiation than the undoped TiO
2
films. Using 2.5 at.% S,N-TiO
2
film, an increase of 166% in current efficiency was obtained at 0.5 V vs Ag/AgCl, in regard to undoped TiO
2
films, together with an enhance of 8.8 times in the initial
·
OH generation rate. |
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ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/1945-7111/abd283 |