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Crystal surface defects and oxygen gettering in thermally oxidized bonded SOI wafers

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Published in:Journal of the Electrochemical Society 2001, Vol.148 (2), p.G36-G42
Main Authors: PAPAKONSTANTINOU, P, SOMASUNDRAM, K, CAO, X, NEVIN, W. A
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Language:English
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ispartof Journal of the Electrochemical Society, 2001, Vol.148 (2), p.G36-G42
issn 0013-4651
1945-7111
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source Institute of Physics
subjects Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Physics
title Crystal surface defects and oxygen gettering in thermally oxidized bonded SOI wafers
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