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Crystal surface defects and oxygen gettering in thermally oxidized bonded SOI wafers
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Published in: | Journal of the Electrochemical Society 2001, Vol.148 (2), p.G36-G42 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
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container_end_page | G42 |
container_issue | 2 |
container_start_page | G36 |
container_title | Journal of the Electrochemical Society |
container_volume | 148 |
creator | PAPAKONSTANTINOU, P SOMASUNDRAM, K CAO, X NEVIN, W. A |
description | |
doi_str_mv | 10.1149/1.1337608 |
format | article |
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fulltext | fulltext |
identifier | ISSN: 0013-4651 |
ispartof | Journal of the Electrochemical Society, 2001, Vol.148 (2), p.G36-G42 |
issn | 0013-4651 1945-7111 |
language | eng |
recordid | cdi_crossref_primary_10_1149_1_1337608 |
source | Institute of Physics |
subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics |
title | Crystal surface defects and oxygen gettering in thermally oxidized bonded SOI wafers |
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