Electrochemical nanostructuring of n-Si(111) single-crystal faces

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 1999, Vol.146 (1), p.141-149
Main Authors: PÖTZSCHKE, R. T, STAIKOV, G, LORENZ, W. J, WIESBECK, W
Format: Article
Language:English
Subjects:
Chemistry
Electrochemistry
Electrodeposition
Exact sciences and technology
General and physical chemistry
Study of interfaces
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c256t-9a73ca3993823b90b3edba815323965aed1455ce210286c042a37d6228b4b8ab3
cites
container_end_page 149
container_issue 1
container_start_page 141
container_title Journal of the Electrochemical Society
container_volume 146
creator PÖTZSCHKE, R. T
STAIKOV, G
LORENZ, W. J
WIESBECK, W
description
doi_str_mv 10.1149/1.1391577
format article
fullrecord <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_1_1391577</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1662884</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-9a73ca3993823b90b3edba815323965aed1455ce210286c042a37d6228b4b8ab3</originalsourceid><addsrcrecordid>eNpFjz1PwzAURS0EEqEw8A8yMNDBxc9fsceqagGpEgMwR8-OA0FpUtnp0H-PUSsxXb2r8650CLkHtgCQ9gkWICyoqrogBVipaAUAl6RgDASVWsE1uUnpJ59gZFWQ5boPfoqj_w67zmNfDjiMaYoHPx1iN3yVY1sO9L17zDPzMuWmD9THY5oy26IP6ZZctdincHfOGfncrD9WL3T79vy6Wm6p50pP1GIlPAprheHCWeZEaBwaUIILqxWGBqRSPnBg3GjPJEdRNZpz46Qz6MSMzE-7Po4pxdDW-9jtMB5rYPWfew312T2zDyd2jylLtREH36X_B625MVL8Ah2NVq4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrochemical nanostructuring of n-Si(111) single-crystal faces</title><source>Institute of Physics</source><creator>PÖTZSCHKE, R. T ; STAIKOV, G ; LORENZ, W. J ; WIESBECK, W</creator><creatorcontrib>PÖTZSCHKE, R. T ; STAIKOV, G ; LORENZ, W. J ; WIESBECK, W</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1.1391577</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>Pennington, NJ: Electrochemical Society</publisher><subject>Chemistry ; Electrochemistry ; Electrodeposition ; Exact sciences and technology ; General and physical chemistry ; Study of interfaces</subject><ispartof>Journal of the Electrochemical Society, 1999, Vol.146 (1), p.141-149</ispartof><rights>1999 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-9a73ca3993823b90b3edba815323965aed1455ce210286c042a37d6228b4b8ab3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=1662884$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PÖTZSCHKE, R. T</creatorcontrib><creatorcontrib>STAIKOV, G</creatorcontrib><creatorcontrib>LORENZ, W. J</creatorcontrib><creatorcontrib>WIESBECK, W</creatorcontrib><title>Electrochemical nanostructuring of n-Si(111) single-crystal faces</title><title>Journal of the Electrochemical Society</title><subject>Chemistry</subject><subject>Electrochemistry</subject><subject>Electrodeposition</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Study of interfaces</subject><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNpFjz1PwzAURS0EEqEw8A8yMNDBxc9fsceqagGpEgMwR8-OA0FpUtnp0H-PUSsxXb2r8650CLkHtgCQ9gkWICyoqrogBVipaAUAl6RgDASVWsE1uUnpJ59gZFWQ5boPfoqj_w67zmNfDjiMaYoHPx1iN3yVY1sO9L17zDPzMuWmD9THY5oy26IP6ZZctdincHfOGfncrD9WL3T79vy6Wm6p50pP1GIlPAprheHCWeZEaBwaUIILqxWGBqRSPnBg3GjPJEdRNZpz46Qz6MSMzE-7Po4pxdDW-9jtMB5rYPWfew312T2zDyd2jylLtREH36X_B625MVL8Ah2NVq4</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>PÖTZSCHKE, R. T</creator><creator>STAIKOV, G</creator><creator>LORENZ, W. J</creator><creator>WIESBECK, W</creator><general>Electrochemical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1999</creationdate><title>Electrochemical nanostructuring of n-Si(111) single-crystal faces</title><author>PÖTZSCHKE, R. T ; STAIKOV, G ; LORENZ, W. J ; WIESBECK, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-9a73ca3993823b90b3edba815323965aed1455ce210286c042a37d6228b4b8ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Chemistry</topic><topic>Electrochemistry</topic><topic>Electrodeposition</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Study of interfaces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PÖTZSCHKE, R. T</creatorcontrib><creatorcontrib>STAIKOV, G</creatorcontrib><creatorcontrib>LORENZ, W. J</creatorcontrib><creatorcontrib>WIESBECK, W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PÖTZSCHKE, R. T</au><au>STAIKOV, G</au><au>LORENZ, W. J</au><au>WIESBECK, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrochemical nanostructuring of n-Si(111) single-crystal faces</atitle><jtitle>Journal of the Electrochemical Society</jtitle><date>1999</date><risdate>1999</risdate><volume>146</volume><issue>1</issue><spage>141</spage><epage>149</epage><pages>141-149</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><cop>Pennington, NJ</cop><pub>Electrochemical Society</pub><doi>10.1149/1.1391577</doi><tpages>9</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 1999, Vol.146 (1), p.141-149
issn 0013-4651
1945-7111
language eng
recordid cdi_crossref_primary_10_1149_1_1391577
source Institute of Physics
subjects Chemistry
Electrochemistry
Electrodeposition
Exact sciences and technology
General and physical chemistry
Study of interfaces
title Electrochemical nanostructuring of n-Si(111) single-crystal faces
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T18%3A54%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrochemical%20nanostructuring%20of%20n-Si(111)%20single-crystal%20faces&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=P%C3%96TZSCHKE,%20R.%20T&rft.date=1999&rft.volume=146&rft.issue=1&rft.spage=141&rft.epage=149&rft.pages=141-149&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1.1391577&rft_dat=%3Cpascalfrancis_cross%3E1662884%3C/pascalfrancis_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c256t-9a73ca3993823b90b3edba815323965aed1455ce210286c042a37d6228b4b8ab3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true